We study the multiexciton properties of GaAs quantum dots self aggregated on Si substrates. Sequential emission of two photons radiative cascade is observed both in continuous wave and in time resolved measurements. Polarization resolved measurements, with high spectral resolution, allow us to attribute the observed photon cascade to positively charged biexciton. Our results highlight the possibility of obtaining systems showing quantum correlations on a Si based device

Accanto, N., Minari, S., Cavigli, L., Bietti, S., Isella, G., Vinattieri, A., et al. (2013). Kinetics of multiexciton complex in GaAs quantum dots on Si. APPLIED PHYSICS LETTERS, 102(5) [10.1063/1.4790148].

Kinetics of multiexciton complex in GaAs quantum dots on Si

BIETTI, SERGIO;SANGUINETTI, STEFANO;
2013

Abstract

We study the multiexciton properties of GaAs quantum dots self aggregated on Si substrates. Sequential emission of two photons radiative cascade is observed both in continuous wave and in time resolved measurements. Polarization resolved measurements, with high spectral resolution, allow us to attribute the observed photon cascade to positively charged biexciton. Our results highlight the possibility of obtaining systems showing quantum correlations on a Si based device
Articolo in rivista - Articolo scientifico
quantum dots, photoluminescence, droplet epitaxy
English
2013
102
5
053109
none
Accanto, N., Minari, S., Cavigli, L., Bietti, S., Isella, G., Vinattieri, A., et al. (2013). Kinetics of multiexciton complex in GaAs quantum dots on Si. APPLIED PHYSICS LETTERS, 102(5) [10.1063/1.4790148].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/49210
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