An effective doping technology for the precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus delta-layer to be used as the dopant source. P atoms are efficiently injected into the Si substrate by high temperature (900-1250 degrees C) thermal treatments. Temperature dependent (100-300 K) resistivity and Hall measurements in the van der Pauw configuration demonstrate high activation rates (eta(a) > 80%) of injected P atoms. This bottom-up approach holds promise for the development of a mild technology for efficient doping of semiconductors.
Perego, M., Caruso, F., Seguini, G., Arduca, E., Mantovan, R., Sparnacci, K., et al. (2020). Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants. JOURNAL OF MATERIALS CHEMISTRY. C, 8(30), 10229-10237 [10.1039/d0tc01856b].
Doping of silicon by phosphorus end-terminated polymers: drive-in and activation of dopants
Caruso, Francesco;
2020
Abstract
An effective doping technology for the precise control of P atom injection and activation into a semiconductor substrate is presented. Polystyrene polymers with a narrow molecular weight distribution and end-terminated with a P containing moiety are used to build up a phosphorus delta-layer to be used as the dopant source. P atoms are efficiently injected into the Si substrate by high temperature (900-1250 degrees C) thermal treatments. Temperature dependent (100-300 K) resistivity and Hall measurements in the van der Pauw configuration demonstrate high activation rates (eta(a) > 80%) of injected P atoms. This bottom-up approach holds promise for the development of a mild technology for efficient doping of semiconductors.File | Dimensione | Formato | |
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