This paper presents a low power transmitter for Impulse-Radio Ultra-Wideband (IR-UWB) applications. It generate short duration bi-phase modulated UWB pulses with a center frequency of 4.5/8 GHz according to the selected channel. A simplified transmitter architecture enabling low power consumption has been adopted. The key circuit is a phase shifter used to obtain positive and negative pulses. Generated pulses comply with requirements of the IEEE 802.15.4a standard. The transmitter is designed in 65nm CMOS technology. Simulations results show that the transmitter consumes 23 mW peak power from a 1.2V supply at 8 GHz of work frequency
Donno, A., D'Amico, S., DE MATTEIS, M., Baschirotto, A. (2013). A 23mW 4.5/8 GHz IR-UWB transmitter in 65nm TSMC CMOS technology. In Conference Proceedings - 9th Conference on Ph. D. Research in Microelectronics and Electronics, PRIME 2013 (pp.225-228) [10.1109/PRIME.2013.6603148].
A 23mW 4.5/8 GHz IR-UWB transmitter in 65nm TSMC CMOS technology
DE MATTEIS, MARCELLO;BASCHIROTTO, ANDREA
2013
Abstract
This paper presents a low power transmitter for Impulse-Radio Ultra-Wideband (IR-UWB) applications. It generate short duration bi-phase modulated UWB pulses with a center frequency of 4.5/8 GHz according to the selected channel. A simplified transmitter architecture enabling low power consumption has been adopted. The key circuit is a phase shifter used to obtain positive and negative pulses. Generated pulses comply with requirements of the IEEE 802.15.4a standard. The transmitter is designed in 65nm CMOS technology. Simulations results show that the transmitter consumes 23 mW peak power from a 1.2V supply at 8 GHz of work frequency
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