One of the largest SDM DR is achieved at low power consumption by means of several SC design solutions, like multi-bit topology, large OSR, improved switching scheme, chopper & NMOS input pair, accurate opamp design. In a 3.3V 0.35μm CMOS technology, 128dB-DR in a 250Hz bandwidth is achieved with 0.75mA current from a single 2.4mW supply for high-performance instrumentation application. © 2012 IEEE.

Guinea, J., Sentieri, E., Baschirotto, A. (2012). An instrumentation 128dB-SNR 750 µA SDM. In ESSCIRC (ESSCIRC), 2012 Proceedings of the (pp.205-208) [10.1109/ESSCIRC.2012.6341294].

An instrumentation 128dB-SNR 750 µA SDM

BASCHIROTTO, ANDREA
2012

Abstract

One of the largest SDM DR is achieved at low power consumption by means of several SC design solutions, like multi-bit topology, large OSR, improved switching scheme, chopper & NMOS input pair, accurate opamp design. In a 3.3V 0.35μm CMOS technology, 128dB-DR in a 250Hz bandwidth is achieved with 0.75mA current from a single 2.4mW supply for high-performance instrumentation application. © 2012 IEEE.
paper
CMOS integrated circuits;network topology;sigma-delta modulation;CMOS technology;NMOS input pair;SC design;SDM DR;current 750 µA;instrumentation;large OSR;low power consumption;multibit topology;Abstracts;Zinc
English
ESSCIRC (ESSCIRC), 2012 Proceedings of the
2012
ESSCIRC (ESSCIRC), 2012 Proceedings of the
978-146732212-6
2012
205
208
6341294
none
Guinea, J., Sentieri, E., Baschirotto, A. (2012). An instrumentation 128dB-SNR 750 µA SDM. In ESSCIRC (ESSCIRC), 2012 Proceedings of the (pp.205-208) [10.1109/ESSCIRC.2012.6341294].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/48380
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