In this paper a dual band balun low-noise-amplifier (LNA) for impulse-radio ultra wide band (IR-UWB) applications is proposed. It exploits a common-gate (CG) stage in parallel to a common-source (CS) featuring 18 dB maximum gain, < 4 dB noise figure and 4 dBm in-band third-order intermodulation intercept (IIP3). A double-peak single notch input network with a dual-band LC load is used for input matching and for WLAN (5-6 GHz) out-of-band interferers suppression, resulting in 16 out-of-band IIP3. This allows to remove the 5-6GHz WLAN dedicated filtering at the antenna reducing costs. The dual-band balun-LNA has been designed in 65nm CMOS technology, 1.2V supply and 9mA current consumption
Chironi, V., D'Amico, S., DE MATTEIS, M., Baschirotto, A. (2013). A dual-band balun LNA resilient to 5-6 GHz WLAN blockers for IR-UWB in 65nm CMOS. In 2013 INTERNATIONAL CONFERENCE ON IC DESIGN AND TECHNOLOGY (ICICDT) (pp.171-174) [10.1109/ICICDT.2013.6563329].
A dual-band balun LNA resilient to 5-6 GHz WLAN blockers for IR-UWB in 65nm CMOS
DE MATTEIS, MARCELLO;BASCHIROTTO, ANDREA
2013
Abstract
In this paper a dual band balun low-noise-amplifier (LNA) for impulse-radio ultra wide band (IR-UWB) applications is proposed. It exploits a common-gate (CG) stage in parallel to a common-source (CS) featuring 18 dB maximum gain, < 4 dB noise figure and 4 dBm in-band third-order intermodulation intercept (IIP3). A double-peak single notch input network with a dual-band LC load is used for input matching and for WLAN (5-6 GHz) out-of-band interferers suppression, resulting in 16 out-of-band IIP3. This allows to remove the 5-6GHz WLAN dedicated filtering at the antenna reducing costs. The dual-band balun-LNA has been designed in 65nm CMOS technology, 1.2V supply and 9mA current consumption
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