In this paper a Charge-Sensitive Preamplifier (CSP) for GEM (Gas Electron Multiplier) detectors readout is presented. The CSP is responsible for signal acquisition and the conversion of the input charge into a voltage signal. The design has been realized in 0.13 mu m CMOS technology. It has been demonstrated through a detailed analysis that this is the best CMOS technology to be used in this case, as regards power consumption, intrinsic gain, noise and radiation hardness. The aim is to reduce the power consumption while maintaining other performance at the state-of-the-art. The preamplifier is composed by a three-stage nested Miller Operational Amplifier, with a feed-forward compensation. The system is able to manage a 15 pF detector capacitance. The global power consumption is 1.1 mW and the Equivalent Noise Charge is 418 e(-)

Pezzotta, A., Costantini, A., DE MATTEIS, M., D'Amico, S., Gorini, G., Murtas, F., et al. (2013). A low-power CMOS 0.13 µm Charge-Sensitive Preamplifier for GEM detectors. In IC Design Technology (ICICDT), 2013 International Conference on (pp.147-150) [10.1109/ICICDT.2013.6563324].

A low-power CMOS 0.13 µm Charge-Sensitive Preamplifier for GEM detectors

PEZZOTTA, ALESSANDRO;COSTANTINI, ANDREA;DE MATTEIS, MARCELLO;GORINI, GIUSEPPE;BASCHIROTTO, ANDREA
2013

Abstract

In this paper a Charge-Sensitive Preamplifier (CSP) for GEM (Gas Electron Multiplier) detectors readout is presented. The CSP is responsible for signal acquisition and the conversion of the input charge into a voltage signal. The design has been realized in 0.13 mu m CMOS technology. It has been demonstrated through a detailed analysis that this is the best CMOS technology to be used in this case, as regards power consumption, intrinsic gain, noise and radiation hardness. The aim is to reduce the power consumption while maintaining other performance at the state-of-the-art. The preamplifier is composed by a three-stage nested Miller Operational Amplifier, with a feed-forward compensation. The system is able to manage a 15 pF detector capacitance. The global power consumption is 1.1 mW and the Equivalent Noise Charge is 418 e(-)
paper
CMOS integrated circuits;electric sensing devices;electron multipliers;low-power electronics;preamplifiers;GEM detectors;Miller operational amplifier;charge-sensitive preamplifier;equivalent noise charge;gas electron multiplier detectors;low-power CMOS;size 0.13 µm;CMOS integrated circuits;CMOS technology;Capacitance;Detectors;Noise;Power demand;Stability analysis;CMOS;GEM detector;charge-sensitive;front-end;preamplifier;readout;trends
English
International Conference on Integrated Circuit Design and Technology (ICICDT) MAY 29-31
2013
IC Design Technology (ICICDT), 2013 International Conference on
978-1-4673-4743-3
2013
147
150
none
Pezzotta, A., Costantini, A., DE MATTEIS, M., D'Amico, S., Gorini, G., Murtas, F., et al. (2013). A low-power CMOS 0.13 µm Charge-Sensitive Preamplifier for GEM detectors. In IC Design Technology (ICICDT), 2013 International Conference on (pp.147-150) [10.1109/ICICDT.2013.6563324].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/48370
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