Ionoacoustic detectors sense the weak signal emitted by the fast energy deposition of a proton beam through the energy absorber and exploit this detected signal to spatially measure the beam penetration depth or range, with promising application in hadron therapy treatment monitoring. However, clinical scenarios exhibit very weak acoustic signal power (tens of mPa) in 10 kHz - 1 MHz bandwidth. Therefore, it is of fundamental importance that the front-end amplifiers operate at very low noise levels (few nV/v Hz of in-band noise power spectral density) to minimize the degradation of the Signal-to-Noise Ratio (SNR). The Low-Noise-Amplifier (LNA) proposed in this paper operates in such a critical scenario, exploiting an advanced and dc-stable pseudo-resistor implementation to minimize noise power, achieving 0.26 dB of Noise Figure. The LNA has been designed in 28 nm CMOS technology, has a passband gain of 30 dB, an integrated noise power in the ionoacoustic bandwidth of 7.5 mu V-RMS and 2.4 mW power consumption.
Stevenazzi, L., Baschirotto, A., Di Gennaro, M., Gelmi, L., Vallicelli, E., De Matteis, M. (2023). A 0.26 dB Noise-Figure 2.4 mW-Power Low-Noise-Amplifier with Auto-Tuned Pseudo-Resistors for Ionoacoustic Range Verification. In PRIME 2023 - 18th International Conference on Ph.D Research in Microelectronics and Electronics, Proceedings (pp.125-128). IEEE [10.1109/prime58259.2023.10161981].
A 0.26 dB Noise-Figure 2.4 mW-Power Low-Noise-Amplifier with Auto-Tuned Pseudo-Resistors for Ionoacoustic Range Verification
Stevenazzi, L;Baschirotto, A;Gelmi, L;Vallicelli, E;De Matteis, M
2023
Abstract
Ionoacoustic detectors sense the weak signal emitted by the fast energy deposition of a proton beam through the energy absorber and exploit this detected signal to spatially measure the beam penetration depth or range, with promising application in hadron therapy treatment monitoring. However, clinical scenarios exhibit very weak acoustic signal power (tens of mPa) in 10 kHz - 1 MHz bandwidth. Therefore, it is of fundamental importance that the front-end amplifiers operate at very low noise levels (few nV/v Hz of in-band noise power spectral density) to minimize the degradation of the Signal-to-Noise Ratio (SNR). The Low-Noise-Amplifier (LNA) proposed in this paper operates in such a critical scenario, exploiting an advanced and dc-stable pseudo-resistor implementation to minimize noise power, achieving 0.26 dB of Noise Figure. The LNA has been designed in 28 nm CMOS technology, has a passband gain of 30 dB, an integrated noise power in the ionoacoustic bandwidth of 7.5 mu V-RMS and 2.4 mW power consumption.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.