This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and quantum communications. Cryogenic DC measurements and physical parameters extraction were carried out on this commercial FinFET technology, operating at room temperature, i.e., 300 K, and down to 2.95 K for different device types and geometries. This represents the main step towards cryogenic compact modeling and optimization of three-dimensional CMOS structures for quantum computations.
Han, H., Jazaeri, F., D'Amico, A., Baschirotto, A., Charbon, E., Enz, C. (2021). Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing. In ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference, Proceedings (pp.71-74). IEEE [10.1109/ESSCIRC53450.2021.9567747].
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
Baschirotto A.;
2021
Abstract
This study presents the first in depth characterization of deep cryogenic electrical behavior of a commercial 16 nm CMOS FinFET technology. This technology is well suited for a broad range of applications, including quantum computing, quantum sensing, and quantum communications. Cryogenic DC measurements and physical parameters extraction were carried out on this commercial FinFET technology, operating at room temperature, i.e., 300 K, and down to 2.95 K for different device types and geometries. This represents the main step towards cryogenic compact modeling and optimization of three-dimensional CMOS structures for quantum computations.
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