This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO2) and then annealed for 24 h at 100 °C. The TID responses of nFinFETs are insensitive to the fin number, as dominated by border and interface trap generation in shallow trench isolation (STI) and/or gate oxide. However, pFinFETs show a visible fin-number dependence with worst tolerance of transistors with the smallest number of fins. The fin number dependence may be related to a larger charge trapping in STI located at the opposite lateral sides of the first and last fins. In addition, both n- and p-FinFETs exhibit an almost TID insensitivity to the finger number. During the design of integrated circuits, the TID tolerance of electronic systems can be enhanced by preferably using transistors with a higher number of fins than fingers.

Ma, T., Bonaldo, S., Mattiazzo, S., Baschirotto, A., Enz, C., Paccagnella, A., et al. (2022). Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 69(3), 307-313 [10.1109/TNS.2021.3125769].

Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses

Baschirotto A.;
2022

Abstract

This article investigates the fin- and finger-number dependence of the total ionizing dose (TID) degradation in 16-nm bulk Si FinFETs at ultrahigh doses. n- and p-FinFETs designed with different numbers of fins and fingers are irradiated up to 500 Mrad(SiO2) and then annealed for 24 h at 100 °C. The TID responses of nFinFETs are insensitive to the fin number, as dominated by border and interface trap generation in shallow trench isolation (STI) and/or gate oxide. However, pFinFETs show a visible fin-number dependence with worst tolerance of transistors with the smallest number of fins. The fin number dependence may be related to a larger charge trapping in STI located at the opposite lateral sides of the first and last fins. In addition, both n- and p-FinFETs exhibit an almost TID insensitivity to the finger number. During the design of integrated circuits, the TID tolerance of electronic systems can be enhanced by preferably using transistors with a higher number of fins than fingers.
Articolo in rivista - Articolo scientifico
16 nm; charge trapping; dc static characteristics; fin number; FinFET; finger number; shallow trench isolation (STI); total ionizing dose (TID);
English
8-nov-2021
2022
69
3
307
313
none
Ma, T., Bonaldo, S., Mattiazzo, S., Baschirotto, A., Enz, C., Paccagnella, A., et al. (2022). Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 69(3), 307-313 [10.1109/TNS.2021.3125769].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/471658
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