Aerosol-Assisted CVD is a novel oxide deposition process. It allows reagents to be brought onto the substrate as a liquid phase. This overcomes typical precursor selection problems often encountered in standard CVDs. Physically, the process stands between CVD and hydrothermal growth, depending on the deposition conditions. A computer simulation will be presented, modelling the process. Theoretical predictions will be compared to experimental results obtained on doped and undoped silica and on tin dioxide.
Narducci, D., Romanelli, C. (1996). Computer simulation of aerosol-assisted chemical vapor deposition processes. In proceedings of the thirteenth international conference on chemical vapor deposition (pp.137-142). PENNINGTON : ELECTROCHEMICAL SOCIETY INC.
Computer simulation of aerosol-assisted chemical vapor deposition processes
NARDUCCI, DARIO;
1996
Abstract
Aerosol-Assisted CVD is a novel oxide deposition process. It allows reagents to be brought onto the substrate as a liquid phase. This overcomes typical precursor selection problems often encountered in standard CVDs. Physically, the process stands between CVD and hydrothermal growth, depending on the deposition conditions. A computer simulation will be presented, modelling the process. Theoretical predictions will be compared to experimental results obtained on doped and undoped silica and on tin dioxide.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.