Aerosol-Assisted CVD is a novel oxide deposition process. It allows reagents to be brought onto the substrate as a liquid phase. This overcomes typical precursor selection problems often encountered in standard CVDs. Physically, the process stands between CVD and hydrothermal growth, depending on the deposition conditions. A computer simulation will be presented, modelling the process. Theoretical predictions will be compared to experimental results obtained on doped and undoped silica and on tin dioxide.

Narducci, D., Romanelli, C. (1996). Computer simulation of aerosol-assisted chemical vapor deposition processes. In proceedings of the thirteenth international conference on chemical vapor deposition (pp.137-142). PENNINGTON : ELECTROCHEMICAL SOCIETY INC.

Computer simulation of aerosol-assisted chemical vapor deposition processes

NARDUCCI, DARIO;
1996

Abstract

Aerosol-Assisted CVD is a novel oxide deposition process. It allows reagents to be brought onto the substrate as a liquid phase. This overcomes typical precursor selection problems often encountered in standard CVDs. Physically, the process stands between CVD and hydrothermal growth, depending on the deposition conditions. A computer simulation will be presented, modelling the process. Theoretical predictions will be compared to experimental results obtained on doped and undoped silica and on tin dioxide.
paper
CVD; Oxides;
English
13th International Conference on Chemical Vapor Deposition (CVD XIII), at the Electrochemical-Society Meeting
1996
proceedings of the thirteenth international conference on chemical vapor deposition
1-56677-155-2
1996
96
5
137
142
none
Narducci, D., Romanelli, C. (1996). Computer simulation of aerosol-assisted chemical vapor deposition processes. In proceedings of the thirteenth international conference on chemical vapor deposition (pp.137-142). PENNINGTON : ELECTROCHEMICAL SOCIETY INC.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/46917
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