In this paper we report results concerning the use of Reflectance Infrared Spectroscopy for the study of film structure and morphology. Analyses were performed on tin dioxide and silicon dioxide thin films. For tin dioxide samples, film thickness and surface roughness could be determined. Also, evidence was obtained of preferential crystallographic orientation, that was confirmed by Transmission Electron Microscopy. On silicon dioxide, usability was proved of infrared reflectance spectra for quantitative analyses of water content in the films.
Narducci, D., Romanelli, C. (1996). Modelling of specular reflection infrared spectra of oxide films for microstructural analysis. In POLYCRYSTALLINE SEMICONDUCTORS IV - PHYSICS, CHEMISTRY AND TECHNOLOGY (pp.289-294). ZUG : Trans Tech Publications Ltd [10.4028/www.scientific.net/SSP.51-52.289].
Modelling of specular reflection infrared spectra of oxide films for microstructural analysis
NARDUCCI, DARIO;
1996
Abstract
In this paper we report results concerning the use of Reflectance Infrared Spectroscopy for the study of film structure and morphology. Analyses were performed on tin dioxide and silicon dioxide thin films. For tin dioxide samples, film thickness and surface roughness could be determined. Also, evidence was obtained of preferential crystallographic orientation, that was confirmed by Transmission Electron Microscopy. On silicon dioxide, usability was proved of infrared reflectance spectra for quantitative analyses of water content in the films.
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