A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti crossing of the first two bilayer subbands is observed and a symmetric antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger Poisson simulations.
Tosato, A., Ferrari, B., Sammak, A., Hamilton, A., Veldhorst, M., Virgilio, M., et al. (2022). A High-Mobility Hole Bilayer in a Germanium Double Quantum Well. ADVANCED QUANTUM TECHNOLOGIES, 5(5) [10.1002/qute.202100167].
A High-Mobility Hole Bilayer in a Germanium Double Quantum Well
Ferrari B.;
2022
Abstract
A hole bilayer in a strained germanium double quantum well is designed, fabricated, and studied. Magnetotransport characterization of double quantum well field effect transistors as a function of gate voltage reveals the population of two hole channels with a high combined mobility of (Formula presented.) and a low percolation density of (Formula presented.). The individual population of the channels from the interference patterns of the Landau fan diagram was resolved. At a density of (Formula presented.) the system is in resonance and an anti crossing of the first two bilayer subbands is observed and a symmetric antisymmetric gap of (Formula presented.) is estimated, in agreement with Schrödinger Poisson simulations.
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