In this article we show by theory predictions how the gap nature of β-FeSi2 could be suitably tailored in heteroepitaxial growth on Si(100) substrates where a Si-Ge buffer layer is used to set the lattice parameter and, in turn, the amount of strain in the FeSi2 film. © 1998 American Vacuum Society.
Miglio, L., Meregalli, V. (1998). Theory of FeSi2 direct gap semiconductor on Si(100). Intervento presentato a: 16th North American Conference on Molecular Beam Epitaxy, Ann Arbor, Michigan [10.1116/1.589947].
Theory of FeSi2 direct gap semiconductor on Si(100)
MIGLIO, LEONIDA;
1998
Abstract
In this article we show by theory predictions how the gap nature of β-FeSi2 could be suitably tailored in heteroepitaxial growth on Si(100) substrates where a Si-Ge buffer layer is used to set the lattice parameter and, in turn, the amount of strain in the FeSi2 film. © 1998 American Vacuum Society.
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