The structural and optical properties of β-FeSi2 precipitates produced by ion beam synthesis have been investigated by transmission electron microscopy, photoluminescence (PL) analysis and near infrared transmission measurements. The PL spectrum of β-FeSi2 precipitates in a dislocation free sample has been observed to consist of a sharp line at 1.54 μm and a weak peak at 1.46 μm. Optical transmission measurements showed a direct band gap about 0.8 eV, smaller than in continuous β-FeSi2 film. Calculation of the electronic bands of β-FeSi2 for different values of the lattice parameters indicates that this reduction can be ascribed to band distortion provided by the lattice strain

Grimaldi, M., Coffa, S., Spinella, C., Marabelli, F., Galli, M., Miglio, L., et al. (1998). Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si. JOURNAL OF LUMINESCENCE, 80(1-4), 467-471 [10.1016/S0022-2313(98)00149-5].

Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si

Miglio, L;
1998

Abstract

The structural and optical properties of β-FeSi2 precipitates produced by ion beam synthesis have been investigated by transmission electron microscopy, photoluminescence (PL) analysis and near infrared transmission measurements. The PL spectrum of β-FeSi2 precipitates in a dislocation free sample has been observed to consist of a sharp line at 1.54 μm and a weak peak at 1.46 μm. Optical transmission measurements showed a direct band gap about 0.8 eV, smaller than in continuous β-FeSi2 film. Calculation of the electronic bands of β-FeSi2 for different values of the lattice parameters indicates that this reduction can be ascribed to band distortion provided by the lattice strain
Articolo in rivista - Articolo scientifico
FeSi2
English
1998
80
1-4
467
471
none
Grimaldi, M., Coffa, S., Spinella, C., Marabelli, F., Galli, M., Miglio, L., et al. (1998). Correlation between structural and optical properties of ion beam synthesized β-FeSi2 precipitates in Si. JOURNAL OF LUMINESCENCE, 80(1-4), 467-471 [10.1016/S0022-2313(98)00149-5].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/44200
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