A series of fine grained C49 thin films were prepared by depositing Ti films on heated amorphous as well as crystalline silicon substrates. Rapid thermal processing at temperatures between 700 and 775 °C was used to transform the metastable C49 phase into the stable C54. The evolution of the film structure and morphology during the transformation was investigated by sheet resistance, optical spectroscopy, diffuse reflectance and AFM measurements. One structural model which could account for our data is proposed according to crystallographic information present in the literature
Bocelli, S., Marabelli, F., Iannuzzi, M., Miglio, L., Grimaldi, M., La Via, F. (1998). Structure, morphology and kinetics of the C49 to C54 phase transformation in TiSi2 thin films. In Proceedings of the 1997 MRS Fall Symposium (pp.593-598). Warrendale, PA, United States : MRS.
Structure, morphology and kinetics of the C49 to C54 phase transformation in TiSi2 thin films
MIGLIO, LEONIDA;
1998
Abstract
A series of fine grained C49 thin films were prepared by depositing Ti films on heated amorphous as well as crystalline silicon substrates. Rapid thermal processing at temperatures between 700 and 775 °C was used to transform the metastable C49 phase into the stable C54. The evolution of the film structure and morphology during the transformation was investigated by sheet resistance, optical spectroscopy, diffuse reflectance and AFM measurements. One structural model which could account for our data is proposed according to crystallographic information present in the literatureI documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.