We compare the surface phonon dispersion curves of GaAs(110) and Ge(111)2 x 1 as calculated by the Bond Charge Model. The atomic masses, bulk force constants and crystallography of the topmost layer are nearly equal, still the substrate orientation and charge distributions are different. Similarities and discrepancies in the surface phonon dispersion curves are investigated as fingerprints of the structure configuration.
Santini, P., Miglio, L., Benedek, G., Ruggerone, P. (1991). Surface phonon-dispersion curves in GAAS(110) AND GE(111)2X1 - a critical comparison. SURFACE SCIENCE, 241(3), 346-352 [10.1016/0039-6028(91)90094-9].
Surface phonon-dispersion curves in GAAS(110) AND GE(111)2X1 - a critical comparison
MIGLIO, LEONIDA;BENEDEK, GIORGIO;
1991
Abstract
We compare the surface phonon dispersion curves of GaAs(110) and Ge(111)2 x 1 as calculated by the Bond Charge Model. The atomic masses, bulk force constants and crystallography of the topmost layer are nearly equal, still the substrate orientation and charge distributions are different. Similarities and discrepancies in the surface phonon dispersion curves are investigated as fingerprints of the structure configuration.
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