We present a calculation of the phonon dispersion relations of an homopolar/heteropolar semiconductor superlattice, in the framework of the bond-charge-model dynamics. Here we take advantage of a new planar approach for the evaluation of Coulomb contributions which has recently been developed for GaAs/AlAs superlattices in a former paper of ours. We point out the important role of the interface modelling with regard to both the force constants and the charge distribution. Similarities and differences in the spectral features among Ge/GaAs, Ge/AlAs and GaAs/AlAs are finally discussed. © 1990.

Colombo, L., Miglio, L. (1990). Lattice-dynamics of homopolar heteropolar semiconductor superlattices - GE GAAS AND GE ALAS. SURFACE SCIENCE, 234(1-2), 169-180 [10.1016/0039-6028(90)90675-X].

Lattice-dynamics of homopolar heteropolar semiconductor superlattices - GE GAAS AND GE ALAS

MIGLIO, LEONIDA
1990

Abstract

We present a calculation of the phonon dispersion relations of an homopolar/heteropolar semiconductor superlattice, in the framework of the bond-charge-model dynamics. Here we take advantage of a new planar approach for the evaluation of Coulomb contributions which has recently been developed for GaAs/AlAs superlattices in a former paper of ours. We point out the important role of the interface modelling with regard to both the force constants and the charge distribution. Similarities and differences in the spectral features among Ge/GaAs, Ge/AlAs and GaAs/AlAs are finally discussed. © 1990.
Articolo in rivista - Articolo scientifico
Lattice-dynamics
English
1990
234
1-2
169
180
none
Colombo, L., Miglio, L. (1990). Lattice-dynamics of homopolar heteropolar semiconductor superlattices - GE GAAS AND GE ALAS. SURFACE SCIENCE, 234(1-2), 169-180 [10.1016/0039-6028(90)90675-X].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/44091
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