We present a calculation of the phonon dispersion relations of an homopolar/heteropolar semiconductor superlattice, in the framework of the bond-charge-model dynamics. Here we take advantage of a new planar approach for the evaluation of Coulomb contributions which has recently been developed for GaAs/AlAs superlattices in a former paper of ours. We point out the important role of the interface modelling with regard to both the force constants and the charge distribution. Similarities and differences in the spectral features among Ge/GaAs, Ge/AlAs and GaAs/AlAs are finally discussed. © 1990.
Colombo, L., Miglio, L. (1990). Lattice-dynamics of homopolar heteropolar semiconductor superlattices - GE GAAS AND GE ALAS. SURFACE SCIENCE, 234(1-2), 169-180 [10.1016/0039-6028(90)90675-X].
Lattice-dynamics of homopolar heteropolar semiconductor superlattices - GE GAAS AND GE ALAS
MIGLIO, LEONIDA
1990
Abstract
We present a calculation of the phonon dispersion relations of an homopolar/heteropolar semiconductor superlattice, in the framework of the bond-charge-model dynamics. Here we take advantage of a new planar approach for the evaluation of Coulomb contributions which has recently been developed for GaAs/AlAs superlattices in a former paper of ours. We point out the important role of the interface modelling with regard to both the force constants and the charge distribution. Similarities and differences in the spectral features among Ge/GaAs, Ge/AlAs and GaAs/AlAs are finally discussed. © 1990.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.