We present a theoretical investigation on the effects induced on the Raman spectra of a binary (001) GaAs/AlAs superlattice by an intentionally deposited ternary AlxGa1-xAs intralayer. We investigate how the intralayer chemical composition and position affect the GaAs-like response of the host system. © 1992.
Colombo, L., Molteni, C., Miglio, L. (1992). Raman Response Of Gaas/Alas Superlattices With Alxga1-Xas Intralayers. SUPERLATTICES AND MICROSTRUCTURES, 12(4), 523-525 [10.1016/0749-6036(92)90313-T].
Raman Response Of Gaas/Alas Superlattices With Alxga1-Xas Intralayers
MIGLIO, LEONIDA
1992
Abstract
We present a theoretical investigation on the effects induced on the Raman spectra of a binary (001) GaAs/AlAs superlattice by an intentionally deposited ternary AlxGa1-xAs intralayer. We investigate how the intralayer chemical composition and position affect the GaAs-like response of the host system. © 1992.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.