We present a total-energy stability diagram of FeSi2 phases which explains the recent experimental findings of pseudomorphic epitaxy on Si(111), depending on film thickness and growth conditions. In particular, our tight binding calculations point out that the appearance of the fluorite structure (gamma) at very low coverages can only be attributed to a binding energy with the silicon substrate sizeably larger than tetragonal (alpha) and CsCl-defected phases. (C) 1995 American Institute of Physics.
Miglio, L., Tavazza, F., Malegori, G. (1995). Stability hierarchy of the pseudomorphic FeSi2 phases: α, γ, and defected CsCl. APPLIED PHYSICS LETTERS, 67(16), 2293-2295 [10.1063/1.115130].
Stability hierarchy of the pseudomorphic FeSi2 phases: α, γ, and defected CsCl
MIGLIO, LEONIDA;
1995
Abstract
We present a total-energy stability diagram of FeSi2 phases which explains the recent experimental findings of pseudomorphic epitaxy on Si(111), depending on film thickness and growth conditions. In particular, our tight binding calculations point out that the appearance of the fluorite structure (gamma) at very low coverages can only be attributed to a binding energy with the silicon substrate sizeably larger than tetragonal (alpha) and CsCl-defected phases. (C) 1995 American Institute of Physics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.