High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. Device development procedures from the epitaxial growth of high quality Ge MQWs by LEPECVD technique, fabrication, and characterization of optoelectronic device are described. © 2012 SPIE.

Chaisakul, P., Marris Morini, D., Isella, G., Chrastina, D., Rouifed, M., Frigerio, J., et al. (2012). Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells. In Silicon Photonics and Photonic Integrated Circuits III [10.1117/12.922095].

Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells

GATTI, ELEONORA;
2012

Abstract

High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. Device development procedures from the epitaxial growth of high quality Ge MQWs by LEPECVD technique, fabrication, and characterization of optoelectronic device are described. © 2012 SPIE.
poster
Stark effect, Ge, quantum wells
English
SPIE Photonics Europe 2012
2012
Silicon Photonics and Photonic Integrated Circuits III
978-081949123-7
2012
8431
84310N
none
Chaisakul, P., Marris Morini, D., Isella, G., Chrastina, D., Rouifed, M., Frigerio, J., et al. (2012). Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells. In Silicon Photonics and Photonic Integrated Circuits III [10.1117/12.922095].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/43466
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