High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. Device development procedures from the epitaxial growth of high quality Ge MQWs by LEPECVD technique, fabrication, and characterization of optoelectronic device are described. © 2012 SPIE.

Chaisakul, P., Marris Morini, D., Isella, G., Chrastina, D., Rouifed, M., Frigerio, J., et al. (2012). Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells. In Silicon Photonics and Photonic Integrated Circuits III. SPIE-INT SOC OPTICAL ENGINEERING [10.1117/12.922095].

Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells

GATTI, ELEONORA;
2012

Abstract

High speed Ge multiple quantum well (MQWs) electro-absorption (EA) modulator is reported. Device development procedures from the epitaxial growth of high quality Ge MQWs by LEPECVD technique, fabrication, and characterization of optoelectronic device are described. © 2012 SPIE.
poster
Electro-absorption modulator; Ge/SiGe multiple quantum wells; Optical interconnects; Silicon photonics;
Stark effect, Ge, quantum wells
English
Silicon Photonics and Photonic Integrated Circuits III
2012
Silicon Photonics and Photonic Integrated Circuits III
9780819491237
2012
8431
84310N
none
Chaisakul, P., Marris Morini, D., Isella, G., Chrastina, D., Rouifed, M., Frigerio, J., et al. (2012). Electroabsorption based on quantum-confined Stark effect from Ge/SiGe multiple quantum wells. In Silicon Photonics and Photonic Integrated Circuits III. SPIE-INT SOC OPTICAL ENGINEERING [10.1117/12.922095].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/43466
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