We have investigated by numerical simulations the gas-phase chemistry of a typical radio frequency, low pressure CH4/Ar plasma used for the deposition of diamond and diamond-like carbon films. We find that CH3 is the most abundant carbon containing radical in pure methane discharges, while it is the carbon dimer C-2 in discharges of methane highly diluted by argon. Thus, we propose that the gaseous precursor of the film is CH3 in methane plasmas, and C-2 in CH4/Ar plasmas. (C) 2000 Elsevier Science B.V. All rights reserved.

Riccardi, C., Barni, R., Fontanesi, M., Tosi, P. (2000). Gaseous precursors of diamond-like carbon films in CH4/Ar plasmas. CHEMICAL PHYSICS LETTERS, 329(1), 66-70.

Gaseous precursors of diamond-like carbon films in CH4/Ar plasmas

RICCARDI, CLAUDIA;BARNI, RUGGERO;FONTANESI, MARCELLO;
2000

Abstract

We have investigated by numerical simulations the gas-phase chemistry of a typical radio frequency, low pressure CH4/Ar plasma used for the deposition of diamond and diamond-like carbon films. We find that CH3 is the most abundant carbon containing radical in pure methane discharges, while it is the carbon dimer C-2 in discharges of methane highly diluted by argon. Thus, we propose that the gaseous precursor of the film is CH3 in methane plasmas, and C-2 in CH4/Ar plasmas. (C) 2000 Elsevier Science B.V. All rights reserved.
Articolo in rivista - Articolo scientifico
plasma; diamond-like carbon film; methane; chemical kinetics
English
2000
329
1
66
70
none
Riccardi, C., Barni, R., Fontanesi, M., Tosi, P. (2000). Gaseous precursors of diamond-like carbon films in CH4/Ar plasmas. CHEMICAL PHYSICS LETTERS, 329(1), 66-70.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/425
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