Van der Waals (vdW) epitaxial growth of large-area and stable two-dimensional (2D) materials of high structural quality on crystalline substrates is crucial for the development of novel device technologies. 2D gallium monochalcogenides with low in-plane symmetry stand out among the layered semiconductor materials family for next-generation optoelectronic and energy conversion applications. Here, we demonstrate the formation of large-area, single crystal and optically active 2D monoclinic gallium telluride (m-GaTe) on silicon substrate via rapid thermal annealing induced phase transformation of vdW epitaxial metastable hexagonal gallium telluride (h-GaTe). Stabilization of multilayer h-GaTe on Si occurs due to the role of the first layer symmetry together with efficient GaTe surface passivation. Moreover, we show that the phase transformation of h-GaTe to m-GaTe is accompanied by the strain relaxation between Si substrate and GaTe. This work opens the way to the fabrication of single-crystal 2D anisotropic semiconductors on standard crystalline wafers that are difficult to be obtained by epitaxial methods.

Zallo, E., Pianetti, A., Prikhodko, A., Cecchi, S., Zaytseva, Y., Giuliani, A., et al. (2023). Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase. NPJ 2D MATERIALS AND APPLICATIONS, 7(1) [10.1038/s41699-023-00390-4].

Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase

Pianetti A.
Secondo
;
Cecchi S.;
2023

Abstract

Van der Waals (vdW) epitaxial growth of large-area and stable two-dimensional (2D) materials of high structural quality on crystalline substrates is crucial for the development of novel device technologies. 2D gallium monochalcogenides with low in-plane symmetry stand out among the layered semiconductor materials family for next-generation optoelectronic and energy conversion applications. Here, we demonstrate the formation of large-area, single crystal and optically active 2D monoclinic gallium telluride (m-GaTe) on silicon substrate via rapid thermal annealing induced phase transformation of vdW epitaxial metastable hexagonal gallium telluride (h-GaTe). Stabilization of multilayer h-GaTe on Si occurs due to the role of the first layer symmetry together with efficient GaTe surface passivation. Moreover, we show that the phase transformation of h-GaTe to m-GaTe is accompanied by the strain relaxation between Si substrate and GaTe. This work opens the way to the fabrication of single-crystal 2D anisotropic semiconductors on standard crystalline wafers that are difficult to be obtained by epitaxial methods.
Articolo in rivista - Articolo scientifico
Gallium Telluride, molecular beam epitaxy, phase transformation, 2D materials, density functional theory
English
27-mar-2023
2023
7
1
19
none
Zallo, E., Pianetti, A., Prikhodko, A., Cecchi, S., Zaytseva, Y., Giuliani, A., et al. (2023). Two-dimensional single crystal monoclinic gallium telluride on silicon substrate via transformation of epitaxial hexagonal phase. NPJ 2D MATERIALS AND APPLICATIONS, 7(1) [10.1038/s41699-023-00390-4].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/409937
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