Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCVD). The films were grown on crystalline Si(100) and Al2O3(0001) and amorphous SiO2 and a-Al2O3 substrates. Their structural properties were compared with those of the Sb2Te3/Si(111) heterostructure. In addition to the effect of the substrate, the influence of pre- and post-growth thermal annealing is also presented. The quality of the films is discussed by comparing their morphological properties, such as roughness and granularity, and ascertaining their crystallinity and their in-plane and out-of-plane orientation.

Rimoldi, M., Cecchini, R., Wiemer, C., Longo, E., Cecchi, S., Mantovan, R., et al. (2021). Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3Thin Films. CRYSTAL GROWTH & DESIGN, 21(9), 5135-5144 [10.1021/acs.cgd.1c00508].

Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3Thin Films

Longo E.;Cecchi S.;
2021

Abstract

Antimony telluride (Sb2Te3) thin films were obtained by metalorganic chemical vapor deposition (MOCVD). The films were grown on crystalline Si(100) and Al2O3(0001) and amorphous SiO2 and a-Al2O3 substrates. Their structural properties were compared with those of the Sb2Te3/Si(111) heterostructure. In addition to the effect of the substrate, the influence of pre- and post-growth thermal annealing is also presented. The quality of the films is discussed by comparing their morphological properties, such as roughness and granularity, and ascertaining their crystallinity and their in-plane and out-of-plane orientation.
Articolo in rivista - Articolo scientifico
Sb2Te3, Metalorganic chemical vapor deposition, thermal treatments
English
2021
21
9
5135
5144
none
Rimoldi, M., Cecchini, R., Wiemer, C., Longo, E., Cecchi, S., Mantovan, R., et al. (2021). Effect of Substrates and Thermal Treatments on Metalorganic Chemical Vapor Deposition-Grown Sb2Te3Thin Films. CRYSTAL GROWTH & DESIGN, 21(9), 5135-5144 [10.1021/acs.cgd.1c00508].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/405402
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