We irradiated commercial SRAMs with wide-spectrum neutrons at different temperatures. We observed that, depending on the vendor, the soft error rate either increases or slightly decreases with temperature, even in devices belonging to the same technology node. SPICE simulations were used to investigate the temperature dependence of the cell feedback time and restoring current. The shape and magnitude of the particle-induced transient current is discussed as a function of temperature. The variability in the response is attributed to the balance of contrasting factors, such as cell speed reduction and increased diffusion with increasing temperature.
Bagatin, M., Gerardin, S., Paccagnella, A., Andreani, C., Gorini, G., Frost, C. (2012). Temperature dependence of neutron-induced soft errors in SRAMs. MICROELECTRONICS RELIABILITY, 52(1), 289-293 [10.1016/j.microrel.2011.08.011].
Temperature dependence of neutron-induced soft errors in SRAMs
GORINI, GIUSEPPE;
2012
Abstract
We irradiated commercial SRAMs with wide-spectrum neutrons at different temperatures. We observed that, depending on the vendor, the soft error rate either increases or slightly decreases with temperature, even in devices belonging to the same technology node. SPICE simulations were used to investigate the temperature dependence of the cell feedback time and restoring current. The shape and magnitude of the particle-induced transient current is discussed as a function of temperature. The variability in the response is attributed to the balance of contrasting factors, such as cell speed reduction and increased diffusion with increasing temperature.
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