We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.

Gerardin, S., Bagatin, M., Ferrario, A., Paccagnella, A., Visconti, A., Beltrami, S., et al. (2012). Neutron-Induced Upsets in NAND Floating Gate Memories. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 12(2), 437-444 [10.1109/TDMR.2012.2192440].

Neutron-Induced Upsets in NAND Floating Gate Memories

FERRARIO, ALBERTO;GORINI, GIUSEPPE;
2012

Abstract

We investigate atmospheric neutron effects on floating-gate cells in NAND Flash memory devices. Charge loss is shown to occur, particularly at the highest program levels, causing raw bit errors in multilevel cell NAND, but to an extent that does not challenge current mandatory error correction specifications. We discuss the physical mechanisms and analyze scaling trends, which show a rapid increase in sensitivity for decreasing feature size.
Articolo in rivista - Articolo scientifico
Bit error rate , Error correction codes , Flash memory , Materials , Neutrons , Nonvolatile memory , Threshold voltage
English
2012
12
2
437
444
6176212
none
Gerardin, S., Bagatin, M., Ferrario, A., Paccagnella, A., Visconti, A., Beltrami, S., et al. (2012). Neutron-Induced Upsets in NAND Floating Gate Memories. IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 12(2), 437-444 [10.1109/TDMR.2012.2192440].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/39080
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