Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers for the detection of photons in high energy physics and medical physics, for instance. In the present work, electrical characterizations of test devices - manufactured by STMicroelectronics - are presented. SiPMs with an area of 3.5×3.5mm2 and a cell pitch of 54 μm were manufactured as arrays of 64 × 64 cells and exhibiting a fill factor of 31%. The capacitance of SiPMs was measured as a function of reverse bias voltage at frequencies ranging from about 20Hz up to 1MHz and temperatures from 310K down to 100K. Leakage currents were measured at temperatures from 410K down to 100K. Thus, the threshold voltage - i.e., the voltage above a SiPM begins to operate in Geiger mode - could be determined as a function of temperature. Finally, an electrical model capable of reproducing the frequency dependence of the device admittance is presented.

Boschini, M., Consolandi, C., Fallica, P., Gervasi, M., Grandi, D., Mazzillo, M., et al. (2012). Electrical Characterization of SiPM as a Function of Test Frequency and Temperature. In Proceedings of the 13th ICATPP Conference "Astroparticle, Particle, Space Physics and Detectors for Physics Application" (pp.663-675). World Scientific [10.1142/9789814405072_0099].

Electrical Characterization of SiPM as a Function of Test Frequency and Temperature

CONSOLANDI, CRISTINA;GERVASI, MASSIMO;PENSOTTI, SIMONETTA;TACCONI, MAURO;
2012

Abstract

Silicon Photomultipliers (SiPM) represent a promising alternative to classical photomultipliers for the detection of photons in high energy physics and medical physics, for instance. In the present work, electrical characterizations of test devices - manufactured by STMicroelectronics - are presented. SiPMs with an area of 3.5×3.5mm2 and a cell pitch of 54 μm were manufactured as arrays of 64 × 64 cells and exhibiting a fill factor of 31%. The capacitance of SiPMs was measured as a function of reverse bias voltage at frequencies ranging from about 20Hz up to 1MHz and temperatures from 310K down to 100K. Leakage currents were measured at temperatures from 410K down to 100K. Thus, the threshold voltage - i.e., the voltage above a SiPM begins to operate in Geiger mode - could be determined as a function of temperature. Finally, an electrical model capable of reproducing the frequency dependence of the device admittance is presented.
No
paper
Silicon Photomultipliers
English
International Conference on Advanced Technology and Particle Physics
9789814405065
Boschini, M., Consolandi, C., Fallica, P., Gervasi, M., Grandi, D., Mazzillo, M., et al. (2012). Electrical Characterization of SiPM as a Function of Test Frequency and Temperature. In Proceedings of the 13th ICATPP Conference "Astroparticle, Particle, Space Physics and Detectors for Physics Application" (pp.663-675). World Scientific [10.1142/9789814405072_0099].
Boschini, M; Consolandi, C; Fallica, P; Gervasi, M; Grandi, D; Mazzillo, M; Pensotti, S; Rancoita, P; Sanfilippo, D; Tacconi, M; Valvo, G
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/39072
Citazioni
  • Scopus 1
  • ???jsp.display-item.citation.isi??? 0
Social impact