In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization.

Dalla Betta, G., Boscardin, M., Batignani, G., Bettarini, S., Bisogni, M., Bosisio, L., et al. (2004). Recent results from the development of silicon detectors with integrated electronics. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 518(1-2), 354-356 [10.1016/j.nima.2003.11.021].

Recent results from the development of silicon detectors with integrated electronics

CARPINELLI, Massimo;
2004

Abstract

In the past few years we have developed a technological process allowing for the fabrication of radiation detectors with integrated electronics on high-resistivity silicon substrates. We report on some recent results relevant to the process optimisation and to device/circuit characterization.
Articolo in rivista - Articolo scientifico
Electrical characterization; Fabrication technology; Field-effect devices; Silicon radiation detectors;
English
354
356
3
Dalla Betta, G., Boscardin, M., Batignani, G., Bettarini, S., Bisogni, M., Bosisio, L., et al. (2004). Recent results from the development of silicon detectors with integrated electronics. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 518(1-2), 354-356 [10.1016/j.nima.2003.11.021].
Dalla Betta, G; Boscardin, M; Batignani, G; Bettarini, S; Bisogni, M; Bosisio, L; Carpinelli, M; Ciacchi, M; Dittongo, S; Forti, F; Giorgi, M; Gregori, P; Manghisoni, M; Novelli, M; Piemonte, C; Rachevskaia, I; Rama, M; Ratti, L; Re, V; Ronchin, S; Sandrelli, F; Simi, G; Speziali, V; Rosso, V; Traversi, G; Zorzi, N
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/389922
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