We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800μm thick silicon bulk, contacted on the backplane. We have studied the current amplification for two different doping profiles of the emitter, obtaining values of β ranging from 60 to 3000. For various emitter and base configurations, we measured the static device characteristics and extracted the leakage currents and the base resistance, verifying the fundamental relationship between them and the total base capacitances. The use of such phototransistors to detect ionizing particles is exploited and discussed.

Batignani, G., Angelini, C., Bisogni, M., Boscardin, M., Bettarini, S., Bondioli, M., et al. (2004). A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 530(1-2), 98-104 [10.1016/j.nima.2004.05.055].

A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates

CARPINELLI, Massimo;
2004

Abstract

We report on bipolar NPN phototransistors fabricated at ITC-IRST on thick high-resistivity silicon substrates. The phototransistor emitter is composed of a phosphorus n+ implant, the base is a diffused high-energy boron implant, and the collector is the 600-800μm thick silicon bulk, contacted on the backplane. We have studied the current amplification for two different doping profiles of the emitter, obtaining values of β ranging from 60 to 3000. For various emitter and base configurations, we measured the static device characteristics and extracted the leakage currents and the base resistance, verifying the fundamental relationship between them and the total base capacitances. The use of such phototransistors to detect ionizing particles is exploited and discussed.
Articolo in rivista - Articolo scientifico
Bipolar junction transistors; Optoelectronics devices; Particle detectors
English
98
104
7
Batignani, G., Angelini, C., Bisogni, M., Boscardin, M., Bettarini, S., Bondioli, M., et al. (2004). A study for the detection of ionizing particles with phototransistors on thick high-resistivity silicon substrates. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 530(1-2), 98-104 [10.1016/j.nima.2004.05.055].
Batignani, G; Angelini, C; Bisogni, M; Boscardin, M; Bettarini, S; Bondioli, M; Bosisio, L; Bucci, F; Calderini, G; Carpinelli, M; Ciacchi, M; Dalla Betta, G; Dittongo, S; Forti, F; Giorgi, M; Gregori, P; Han, D; Manfredi, P; Manghisoni, M; Marchiori, G; Neri, N; Novelli, M; Paoloni, E; Piemonte, C; Rachevskaia, I; Rama, M; Ratti, L; Re, V; Rizzo, G; Ronchin, S; Rosso, V; Simi, G; Speziali, V; Stefanini, A; Zorzi, N
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/389913
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