Sn centers are point defects easily formed by X-ray irradiation of Sn-doped silica. Point defects are a tool for assessing the substitutional character of the dopant in Sn-doped SiO2 glasses with different Sn content (SnO2/SiO2 ratio from 0.01 to 10.0% w/w) and prepared by two sol-gel methods differing in tin precursors (tin tetraterbutoxide and tin dibutyldiacetate). The former method produced transparent crack-free monolithic glasses of Sn-doped silica with maximum tin content of 0.1% (SnO2/SiO2% w/w). The latter method is more efficient and produced transparent glasses with a tin content of 1%.
Chiodini, N., Meinardi, F., Morazzoni, F., Paleari, A., Scotti, R., Spinolo, G. (1999). Tin E' centers in X-ray irradiated Sn-doped silica. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 540, 383-388.
Tin E' centers in X-ray irradiated Sn-doped silica
CHIODINI, NORBERTO;MEINARDI, FRANCESCO;MORAZZONI, FRANCA;PALEARI, ALBERTO MARIA FELICE;SCOTTI, ROBERTO;SPINOLO, GIORGIO MARIO
1999
Abstract
Sn centers are point defects easily formed by X-ray irradiation of Sn-doped silica. Point defects are a tool for assessing the substitutional character of the dopant in Sn-doped SiO2 glasses with different Sn content (SnO2/SiO2 ratio from 0.01 to 10.0% w/w) and prepared by two sol-gel methods differing in tin precursors (tin tetraterbutoxide and tin dibutyldiacetate). The former method produced transparent crack-free monolithic glasses of Sn-doped silica with maximum tin content of 0.1% (SnO2/SiO2% w/w). The latter method is more efficient and produced transparent glasses with a tin content of 1%.
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