Light-induced degradation (LID) due to boronoxygen complex formation seriously diminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on the net doping

Bernardini, S., Saynova, D., Binetti, S., Coletti, G. (2012). Light-Induced degradation in compensated mc-Si p-type solar cells. In Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE (pp.3242-3247). IEEE [10.1109/PVSC.2012.6318268].

Light-Induced degradation in compensated mc-Si p-type solar cells

BINETTI, SIMONA OLGA;
2012

Abstract

Light-induced degradation (LID) due to boronoxygen complex formation seriously diminishes the efficiency of p-type solar cells. The influence of dopants concentration, net doping and oxygen on the degradation process is investigated using a large variety of B and P compensated mc-Si ingots. Our experiments indicate that the trend of LID depends on the amounts of interstitial oxygen [Oi] and total boron [B]. No clear dependence was found on the net doping
slide + paper
boron, degradation, doping, oxygen, photovoltaic cells, silicon
English
IEEE Photovoltaic Specialists Conference (PVSC) JUN 03-08
2012
Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE
978-146730064-3
2012
3242
3247
6318268
none
Bernardini, S., Saynova, D., Binetti, S., Coletti, G. (2012). Light-Induced degradation in compensated mc-Si p-type solar cells. In Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE (pp.3242-3247). IEEE [10.1109/PVSC.2012.6318268].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/37475
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