Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride.

Narducci, D., Selezneva, E., Cerofolini, G., Frabboni, S., Ottaviani, G. (2012). Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors. JOURNAL OF SOLID STATE CHEMISTRY, 193, 19-25 [10.1016/j.jssc.2012.03.032].

Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors

NARDUCCI, DARIO
;
SELEZNEVA, EKATERINA;
2012

Abstract

Energy filtering has been widely considered as a suitable tool to increase the thermoelectric performances of several classes of materials. In its essence, energy filtering provides a way to increase the Seebeck coefficient by introducing a strongly energy-dependent scattering mechanism. Under certain conditions, however, potential barriers may lead to carrier localization, that may also affect the thermoelectric properties of a material. A model is proposed, actually showing that randomly distributed potential barriers (as those found, e.g., in polycrystalline films) may lead to the simultaneous occurrence of energy filtering and carrier localization. Localization is shown to cause a decrease of the actual carrier density that, along with the quantum tunneling of carriers, may result in an unexpected increase of the power factor with the doping level. The model is corroborated toward experimental data gathered by several authors on degenerate polycrystalline silicon and lead telluride.
Articolo in rivista - Articolo scientifico
Thermoelectricity; Silicon; Energy filtering;
English
2012
193
19
25
reserved
Narducci, D., Selezneva, E., Cerofolini, G., Frabboni, S., Ottaviani, G. (2012). Impact of energy filtering and carrier localization on the thermoelectric properties of granular semiconductors. JOURNAL OF SOLID STATE CHEMISTRY, 193, 19-25 [10.1016/j.jssc.2012.03.032].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/37363
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