In this paper, a double-axis micro Fluxgate magnetic sensor is presented. The device represents an evolution of a PCB dual axis sensor previously realized. In the PCB version the experimental results exhibit excellent agreement with the simulations performed using a tool based on the finite element method. Using the same design approach a version of double-axis Fluxgate structure is here proposed to be realized in IC technology. The accurate study of the magnetic field distribution allows a 75% area saving for the IC version with respect to a direct scaling of the PCB version. Imposing an external magnetic field of about 60 μT the simulated differential output voltage of the micro-integrated Fluxgate sensor achieves a peak value of 1 mV with 5 mA sinusoidal excitation current peak at 100 kHz. The integrated microstructure shows a linearity error of about 1.15% of the full scale, in the range of ±50 μT with a sensitivity of about 0.45 mV / μT. © 2007 IEEE.
Baschirotto, A., Dallago, E., Malcovati, P., Marchesi, M., Venchi, G. (2007). A Fluxgate Magnetic Sensor: From PCB to Micro-Integrated Technology. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 56(1), 25-31 [10.1109/TIM.2006.887218].
A Fluxgate Magnetic Sensor: From PCB to Micro-Integrated Technology
BASCHIROTTO, ANDREA;
2007
Abstract
In this paper, a double-axis micro Fluxgate magnetic sensor is presented. The device represents an evolution of a PCB dual axis sensor previously realized. In the PCB version the experimental results exhibit excellent agreement with the simulations performed using a tool based on the finite element method. Using the same design approach a version of double-axis Fluxgate structure is here proposed to be realized in IC technology. The accurate study of the magnetic field distribution allows a 75% area saving for the IC version with respect to a direct scaling of the PCB version. Imposing an external magnetic field of about 60 μT the simulated differential output voltage of the micro-integrated Fluxgate sensor achieves a peak value of 1 mV with 5 mA sinusoidal excitation current peak at 100 kHz. The integrated microstructure shows a linearity error of about 1.15% of the full scale, in the range of ±50 μT with a sensitivity of about 0.45 mV / μT. © 2007 IEEE.
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