The analog baseband section of a receiver for high data-rate 60GHz wireless communications is implemented in 90nm CMOS. It consists of the cascade of a 1st-order transimpedance amplifier with finely programmable gain, a 4th-order source-follower based filter and a coarse gain 1 st-order programmable gain amplifier, resulting in an overall 6 th-order selectivity and a 1GHz cut-off frequency. Gain can be programmed from 0dB up to 20dB with 1dB step control, drawing 9.5mA (0-9dB gain range) or 10.8mA (10-20dB gain range) from a 1V supply. A 8.2dBm IIP3 and a -145dBm/Hz IRN are measured respectively at 0dB and 20dB gain. The entire baseband section occupies 400×390μm2 die area. © 2011 IEEE.
D'Amico, S., Spagnolo, A., Donno, A., Wambacq, P., Baschirotto, A. (2011). A 9.5mW analog baseband RX section for 60GHz communications in 90nm CMOS. In Radio Frequency Integrated Circuits Symposium (RFIC) (pp.1-4). IEEE [10.1109/RFIC.2011.5940689].
A 9.5mW analog baseband RX section for 60GHz communications in 90nm CMOS
BASCHIROTTO, ANDREA
2011
Abstract
The analog baseband section of a receiver for high data-rate 60GHz wireless communications is implemented in 90nm CMOS. It consists of the cascade of a 1st-order transimpedance amplifier with finely programmable gain, a 4th-order source-follower based filter and a coarse gain 1 st-order programmable gain amplifier, resulting in an overall 6 th-order selectivity and a 1GHz cut-off frequency. Gain can be programmed from 0dB up to 20dB with 1dB step control, drawing 9.5mA (0-9dB gain range) or 10.8mA (10-20dB gain range) from a 1V supply. A 8.2dBm IIP3 and a -145dBm/Hz IRN are measured respectively at 0dB and 20dB gain. The entire baseband section occupies 400×390μm2 die area. © 2011 IEEE.
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