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A complete analog front-end, with the exclusion of the frequency synthesizer, for FM broadcasting occupies 2.8 mm 2 active area in a standard 0.35 μm CMOS technology. The use of current driven passive mixer and switch capacitor polyphase filter gives +100 dBμV IIP3, 52 dB adjacent channel selectivity and +39 dB image rejection without trimming or tuning. The output noise is 390 nV//√Hz, with a conversion gain of about 39 dB. This front-end consumes only 5 mA from a 2.4 V supply © 2006 IEEE.

Bianchi, S., Signini, M., Baschirotto, A., Bietti, I., Bona, C., Canobbio, A., et al. (2006). A 5mA CMOS FM Front-End with 39 dB IRR and 52 dB Channel Selectivity. In ESSCIRC 2006 - Proceedings of the 32nd European Solid-State Circuits Conference (pp.207-210). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/ESSCIR.2006.307567].

A 5mA CMOS FM Front-End with 39 dB IRR and 52 dB Channel Selectivity

BASCHIROTTO, ANDREA;
2006

Abstract

A complete analog front-end, with the exclusion of the frequency synthesizer, for FM broadcasting occupies 2.8 mm 2 active area in a standard 0.35 μm CMOS technology. The use of current driven passive mixer and switch capacitor polyphase filter gives +100 dBμV IIP3, 52 dB adjacent channel selectivity and +39 dB image rejection without trimming or tuning. The output noise is 390 nV//√Hz, with a conversion gain of about 39 dB. This front-end consumes only 5 mA from a 2.4 V supply © 2006 IEEE.
paper
Broadcasting; Frequency modulation; Frequency synthesizers; Channel selectivity; Image rejection; Switch capacitor polyphase filter; CMOS integrated circuits;
English
ESSCIRC 2006 - 32nd European Solid-State Circuits Conference - 19 September 2006 through 21 September 2006
2006
ESSCIRC 2006 - Proceedings of the 32nd European Solid-State Circuits Conference
978-142440302-8
PROCEEDINGS OF ESSCIRC
2006
207
210
4099740
none
Bianchi, S., Signini, M., Baschirotto, A., Bietti, I., Bona, C., Canobbio, A., et al. (2006). A 5mA CMOS FM Front-End with 39 dB IRR and 52 dB Channel Selectivity. In ESSCIRC 2006 - Proceedings of the 32nd European Solid-State Circuits Conference (pp.207-210). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/ESSCIR.2006.307567].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/36813
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