A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each pixel integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. The sensor generates two 10-bit analog outputs allowing a typical dynamic range exceeding 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) of the total signal swing (2 V) at low (high) irradiance without any external calibration procedures. A 140 × 140-pixel array has been fabricated in a 0.35-μm, two-poly four-metal (2P4M), 3.3-V standard CMOS technology. The chip measures 3.9 × 4.6 mm 2 with a pixel pitch of 15 μm and a fill factor of 20%. © 2007 IEEE.
Stoppa, D., Vatteroni, M., Covi, D., Baschirotto, A., Sartori, A., Simoni, A. (2007). A 120-dB Dynamic Range CMOS Image Sensor With Programmable Power Responsivity. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 42(7), 1555-1563 [10.1109/JSSC.2007.899089].
A 120-dB Dynamic Range CMOS Image Sensor With Programmable Power Responsivity
BASCHIROTTO, ANDREA;
2007
Abstract
A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each pixel integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. The sensor generates two 10-bit analog outputs allowing a typical dynamic range exceeding 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) of the total signal swing (2 V) at low (high) irradiance without any external calibration procedures. A 140 × 140-pixel array has been fabricated in a 0.35-μm, two-poly four-metal (2P4M), 3.3-V standard CMOS technology. The chip measures 3.9 × 4.6 mm 2 with a pixel pitch of 15 μm and a fill factor of 20%. © 2007 IEEE.
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