A high-selectivity switched-capacitor bandpass filter is presented. The filter center frequency is 100 kHz with a -3 dB bandwidth of 980 Hz (i.e., with a quality factor Q ∼ 100). This has been implemented with a 12th-order transfer function whose poles are placed at only two frequencies. This choice has been used in the integrated circuit realization. In fact, the transfer function has been implemented using the cascade of six biquad cells of only two types. For the available 20 samples, the center frequency mean-value error is lower than 0.2%, and the Q mean-value error is lower than 0.2% as well. The filter is realized in a not-recent BiCMOS technology (L NMOS = 4 μm, L PMOS = 3 μm). The same performance (opamp, switches, and overall filter) can be easily obtained with a standard scaled-down (0.35 μm, for instance) CMOS technology. In this direction, an evaluation of the area and power consumption of the circuit as implemented in a standard 0.35-μm CMOS technology is finally given.
Baschirotto, A., Bollati, G., Fassina, A., Montecchi, F., Stefani, F. (2001). A high-selectivity switched-capacitor bandpass filter. IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS. 2, ANALOG AND DIGITAL SIGNAL PROCESSING, 48(4), 351-358 [10.1109/82.933793].
A high-selectivity switched-capacitor bandpass filter
BASCHIROTTO, ANDREA;
2001
Abstract
A high-selectivity switched-capacitor bandpass filter is presented. The filter center frequency is 100 kHz with a -3 dB bandwidth of 980 Hz (i.e., with a quality factor Q ∼ 100). This has been implemented with a 12th-order transfer function whose poles are placed at only two frequencies. This choice has been used in the integrated circuit realization. In fact, the transfer function has been implemented using the cascade of six biquad cells of only two types. For the available 20 samples, the center frequency mean-value error is lower than 0.2%, and the Q mean-value error is lower than 0.2% as well. The filter is realized in a not-recent BiCMOS technology (L NMOS = 4 μm, L PMOS = 3 μm). The same performance (opamp, switches, and overall filter) can be easily obtained with a standard scaled-down (0.35 μm, for instance) CMOS technology. In this direction, an evaluation of the area and power consumption of the circuit as implemented in a standard 0.35-μm CMOS technology is finally given.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.