In this communication a circuit for the detection of the Threshold Voltage Vth of MOS devices is presented. The basic scheme here proposed is implemented in BiCMOS technology but can also be applied in any standard CMOS process. The deviation of the 'detected' Vth (VTHdet) from the 'actual' (or extrapolated) one (VTHext) is analytically estimated keeping into account in particular the effects due to the channel length modulation and the mobility modulation.

Alini, R., Baschirotto, A., Castello, R., Montecchi, F. (1992). Accurate MOS threshold voltage detector for bias circuitry. In Proceedings - IEEE International Symposium on Circuits and Systems (pp.1280-1283). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISCAS.1992.230271].

Accurate MOS threshold voltage detector for bias circuitry

Baschirotto, A;
1992

Abstract

In this communication a circuit for the detection of the Threshold Voltage Vth of MOS devices is presented. The basic scheme here proposed is implemented in BiCMOS technology but can also be applied in any standard CMOS process. The deviation of the 'detected' Vth (VTHdet) from the 'actual' (or extrapolated) one (VTHext) is analytically estimated keeping into account in particular the effects due to the channel length modulation and the mobility modulation.
paper
-25 to 125 degC; BiCMOS technology; CMOS process; MOS threshold voltage detector; bias circuitry; channel length modulation; mobility modulation; BiCMOS integrated circuits; MOS integrated circuits; electric sensing devices; insulated gate field effect transistors; integrated circuit testing; voltage measurement
English
IEEE International Symposium on Circuits and Systems, ISCAS 1992 10-13 May
1992
Proceedings - IEEE International Symposium on Circuits and Systems
0780305930
1992
3
1280
1283
230271
none
Alini, R., Baschirotto, A., Castello, R., Montecchi, F. (1992). Accurate MOS threshold voltage detector for bias circuitry. In Proceedings - IEEE International Symposium on Circuits and Systems (pp.1280-1283). Institute of Electrical and Electronics Engineers Inc. [10.1109/ISCAS.1992.230271].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/36775
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