A Single Miller capacitor FeedForward Compensation (SMFFC) technique with a novel Common Mode (CM) control circuitry for fully-differential multistage amplifiers is presented in this paper. The novel alternative to control the output common-mode voltage, adding a feed-forward path to a normal Common-Mode Feed-Back (CMFB) amplifier, allows to have a very stable and wide-band regulation. A fully-differential three-stage amplifier based on this approach has been implemented in 65-nm CMOS technology. A DC-gain of 84-dB and a bandwidth of 200-MHz are achieved, driving a 25-kω//l-pF load. Thanks to the novel control circuitry, the CM path achieved 136-MHz bandwidth with 85-dB DC-gain. The power consumption is 10.17-mW with a 1-V power supply. It occupies 0.02-mm2 of silicon area.
Di Sancarlo, I., Giotta, D., Baschirotto, A., Gaggl, R. (2008). A 65-nm 84-dB-gain 200-MHz-UGB CMOS fully-differential three-stage amplifier with a novel Common Mode control. In ESSCIRC 2008 - Proceedings of the 34th European Solid-State Circuits Conference (pp.314-317). 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE [10.1109/ESSCIRC.2008.4681855].
A 65-nm 84-dB-gain 200-MHz-UGB CMOS fully-differential three-stage amplifier with a novel Common Mode control
BASCHIROTTO, ANDREA;
2008
Abstract
A Single Miller capacitor FeedForward Compensation (SMFFC) technique with a novel Common Mode (CM) control circuitry for fully-differential multistage amplifiers is presented in this paper. The novel alternative to control the output common-mode voltage, adding a feed-forward path to a normal Common-Mode Feed-Back (CMFB) amplifier, allows to have a very stable and wide-band regulation. A fully-differential three-stage amplifier based on this approach has been implemented in 65-nm CMOS technology. A DC-gain of 84-dB and a bandwidth of 200-MHz are achieved, driving a 25-kω//l-pF load. Thanks to the novel control circuitry, the CM path achieved 136-MHz bandwidth with 85-dB DC-gain. The power consumption is 10.17-mW with a 1-V power supply. It occupies 0.02-mm2 of silicon area.
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