A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each 15×15μm 2-pixel cell integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. A 140×140-pixel array has been fabricated in a 0.35-μm, 3.3-V standard CMOS technology. The sensor features a typical dynamic range of 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) at low (high) irradiance. © 2006 IEEE.
Stoppa, D., Simoni, A., Baschirotto, A. (2006). A 120-dB dynamic range CMOS image sensor with programmable power responsivity. In Solid-State Circuits Conference, 2006. ESSCIRC 2006. Proceedings of the 32nd European (pp.420-423) [10.1109/ESSCIR.2006.307470].
A 120-dB dynamic range CMOS image sensor with programmable power responsivity
BASCHIROTTO, ANDREA
2006
Abstract
A high dynamic range CMOS image sensor providing a user-programmable power responsivity curve is presented. Each 15×15μm 2-pixel cell integrates, besides a 4T active pixel structure, a voltage comparator and an analog memory to implement a time-to-saturation scheme while also providing the standard integrated photo-current signal. A 140×140-pixel array has been fabricated in a 0.35-μm, 3.3-V standard CMOS technology. The sensor features a typical dynamic range of 120 dB with a temporal noise lower than 0.13% and a fixed pattern noise of 0.4% (1.7%) at low (high) irradiance. © 2006 IEEE.
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