Silicon Photomultipliers are semiconductor-based photodetectors with performances similar to the traditional photomultiplier tubes, frequently used in many fields. In this article we report results obtained testing some devices at cryogenic temperatures in view of an application for scintillation light detection in detectors that use liquid argon as active medium. This campaign of measurements is the first step to find the most suitable model for this application.

Cervi, T., Bonesini, M., Falcone, A., Menegolli, A., Raselli, G., Rossella, M., et al. (2017). Characterization of AdvanSiD and Hamamatsu SiPMs for Novel Design Cryogenic Detectors. In 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016 (pp.1-5). 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/NSSMIC.2016.8069777].

Characterization of AdvanSiD and Hamamatsu SiPMs for Novel Design Cryogenic Detectors

Bonesini M.;Falcone A.;Torti M.
2017

Abstract

Silicon Photomultipliers are semiconductor-based photodetectors with performances similar to the traditional photomultiplier tubes, frequently used in many fields. In this article we report results obtained testing some devices at cryogenic temperatures in view of an application for scintillation light detection in detectors that use liquid argon as active medium. This campaign of measurements is the first step to find the most suitable model for this application.
Si
paper
Photo Detector
English
2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016
978-1-5090-1642-6
Cervi, T., Bonesini, M., Falcone, A., Menegolli, A., Raselli, G., Rossella, M., et al. (2017). Characterization of AdvanSiD and Hamamatsu SiPMs for Novel Design Cryogenic Detectors. In 2016 IEEE Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop, NSS/MIC/RTSD 2016 (pp.1-5). 345 E 47TH ST, NEW YORK, NY 10017 USA : Institute of Electrical and Electronics Engineers Inc. [10.1109/NSSMIC.2016.8069777].
Cervi, T; Bonesini, M; Falcone, A; Menegolli, A; Raselli, G; Rossella, M; Torti, M
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/357801
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