Abstract We tested the performance of two types of silicon photomultipliers, AdvanSiD ASD-NUV-SiPM3S-P and Hamamatsu 3×3 MM-50 UM VUV2, both at room (300 K) and at liquid nitrogen (77 K) temperature: breakdown voltage, quenching resistance, signal shape, gain and dark counts rate have been studied as function of temperature. The response of the devices to ultra-violet light is also studied.
Falcone, A., Bertoni, R., Boffelli, F., Bonesini, M., Cervi, T., Menegolli, A., et al. (2015). Vacuum ultra-violet and ultra-violet scintillation light detection by means of silicon photomultipliers at cryogenic temperature. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION A, ACCELERATORS, SPECTROMETERS, DETECTORS AND ASSOCIATED EQUIPMENT, 787, 216-219 [10.1016/j.nima.2014.12.006].
Vacuum ultra-violet and ultra-violet scintillation light detection by means of silicon photomultipliers at cryogenic temperature
Falcone A.
;Bonesini M.;Spanu M.;Torti M.;
2015
Abstract
Abstract We tested the performance of two types of silicon photomultipliers, AdvanSiD ASD-NUV-SiPM3S-P and Hamamatsu 3×3 MM-50 UM VUV2, both at room (300 K) and at liquid nitrogen (77 K) temperature: breakdown voltage, quenching resistance, signal shape, gain and dark counts rate have been studied as function of temperature. The response of the devices to ultra-violet light is also studied.
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