This paper presents a fully integrated 65nm CMOS Low-Dropout (LDO) voltage regulator for MEMS devices in the microphone field. The proposed LDO exploits a nested loop to generate the regulated voltage. The external loop generates a precise mathbf{V}_{mathbf{out}} and the internal loop gets a fast transient response by means of a Flipped Voltage Follower (FVF). To achieve a high Power Supply Rejection (PSR) a Tail compensated Error Amplifier (EA) was used. Powered by a {1.8mathrm{V}pm 10%} VDD, the LDO provides a 1.2V regulated voltage in the whole temperature range {[-40, 85]{circ}mathrm{C}} while consuming a quiescent current of 8.7uA (15. 7u W of nominal power consumption). It is capable of driving from 200uA to 800uA of static current load without affecting performance. The LDO occupies an active area of {0.0363text{mm}{{2}}} {(0.3text{mm x} 0.121text{mm})} including the 70pF on chip capacitor. This means that the LDO can be used in a System on a Chip (Soc) thanks to the absence of an off-chip capacitor. The simulation shows a PSR {< -70text{dB}} in the audio band ([20, 20k]Hz), a PSR peak below -10dB and a fast transient response of 148ns. Furthermore, Montecarlo and PVT simulations show the robustness of the circuit. Worst cases prove that the mathbf{V}_{mathbf{out}} value never exceeds {1.2mathrm{V}pm 5%} during DC and transient analysis. The overall mathbf{V}_{mathbf{out}} error is 0.3%.

Barteselli, E., Sant, L., Gaggl, R., Baschirotto, A. (2021). High Audio Band PSR and Fast Settling-Time Dual-Loop LDO Regulator Architecture for Low-Power Application. In International Conference on Electrical, Computer, and Energy Technologies, ICECET 2021 (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECET52533.2021.9698752].

High Audio Band PSR and Fast Settling-Time Dual-Loop LDO Regulator Architecture for Low-Power Application

Barteselli Edoardo
Primo
;
Sant Luca
Secondo
;
Baschirotto Andrea
Ultimo
2021

Abstract

This paper presents a fully integrated 65nm CMOS Low-Dropout (LDO) voltage regulator for MEMS devices in the microphone field. The proposed LDO exploits a nested loop to generate the regulated voltage. The external loop generates a precise mathbf{V}_{mathbf{out}} and the internal loop gets a fast transient response by means of a Flipped Voltage Follower (FVF). To achieve a high Power Supply Rejection (PSR) a Tail compensated Error Amplifier (EA) was used. Powered by a {1.8mathrm{V}pm 10%} VDD, the LDO provides a 1.2V regulated voltage in the whole temperature range {[-40, 85]{circ}mathrm{C}} while consuming a quiescent current of 8.7uA (15. 7u W of nominal power consumption). It is capable of driving from 200uA to 800uA of static current load without affecting performance. The LDO occupies an active area of {0.0363text{mm}{{2}}} {(0.3text{mm x} 0.121text{mm})} including the 70pF on chip capacitor. This means that the LDO can be used in a System on a Chip (Soc) thanks to the absence of an off-chip capacitor. The simulation shows a PSR {< -70text{dB}} in the audio band ([20, 20k]Hz), a PSR peak below -10dB and a fast transient response of 148ns. Furthermore, Montecarlo and PVT simulations show the robustness of the circuit. Worst cases prove that the mathbf{V}_{mathbf{out}} value never exceeds {1.2mathrm{V}pm 5%} during DC and transient analysis. The overall mathbf{V}_{mathbf{out}} error is 0.3%.
No
slide + paper
65nm CMOS; audio band; fast settling; LDO; low dropout regulator; low power; PSR; tail compensation; voltage regulator;
English
2021 International Conference on Electrical, Computer and Energy Technologies (ICECET) - 9 December 2021 through 10 December 2021
978-166544231-2
Barteselli, E., Sant, L., Gaggl, R., Baschirotto, A. (2021). High Audio Band PSR and Fast Settling-Time Dual-Loop LDO Regulator Architecture for Low-Power Application. In International Conference on Electrical, Computer, and Energy Technologies, ICECET 2021 (pp.1-4). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECET52533.2021.9698752].
Barteselli, E; Sant, L; Gaggl, R; Baschirotto, A
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/355830
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