Thermally Stimulated Luminescence (TSL) and phosphorescence measurements excited by X- and beta rays have been performed above room temperature on fused quartz and on thin SiO2 films deposited on a silicon substrate by the technique of chemical vapour deposition. Although in these types of SiO2 the basic TSL features, noticeably the prominent glow peak at 60 < T < 120°C, are similar to those already studied in quartz, some behaviours are different. Specifically, the maximum temperature of the glow peak shifts linearly to higher temperatures as a consequence of partial pre-heating treatments and the phosphorescence decay shows a t-1 power law. The implications of these results are discussed also in comparison with the corresponding ones of crystalline quartz and with preliminary data on thermally stimulated currents measurements. © 1994.
Martini, M., Spinolo, G., Arena, C., & Vedda, A.G. (1994). Phosphorescence and thermally stimulated luminescence of amorphous SiO2. SOLID STATE COMMUNICATIONS.
Citazione: | Martini, M., Spinolo, G., Arena, C., & Vedda, A.G. (1994). Phosphorescence and thermally stimulated luminescence of amorphous SiO2. SOLID STATE COMMUNICATIONS. | |
Tipo: | Articolo in rivista - Articolo scientifico | |
Carattere della pubblicazione: | Scientifica | |
Titolo: | Phosphorescence and thermally stimulated luminescence of amorphous SiO2 | |
Autori: | Martini, M; Spinolo, G; Arena, C; Vedda, AG | |
Autori: | ||
Data di pubblicazione: | 1994 | |
Lingua: | English | |
Rivista: | SOLID STATE COMMUNICATIONS | |
Appare nelle tipologie: | 01 - Articolo su rivista |