Thermally Stimulated Luminescence (TSL) and phosphorescence measurements excited by X- and beta rays have been performed above room temperature on fused quartz and on thin SiO2 films deposited on a silicon substrate by the technique of chemical vapour deposition. Although in these types of SiO2 the basic TSL features, noticeably the prominent glow peak at 60 < T < 120°C, are similar to those already studied in quartz, some behaviours are different. Specifically, the maximum temperature of the glow peak shifts linearly to higher temperatures as a consequence of partial pre-heating treatments and the phosphorescence decay shows a t-1 power law. The implications of these results are discussed also in comparison with the corresponding ones of crystalline quartz and with preliminary data on thermally stimulated currents measurements. © 1994.
Martini, M., Spinolo, G., Arena, C., & Vedda, A.G. (1994). Phosphorescence and thermally stimulated luminescence of amorphous SiO2. SOLID STATE COMMUNICATIONS.
|Citazione:||Martini, M., Spinolo, G., Arena, C., & Vedda, A.G. (1994). Phosphorescence and thermally stimulated luminescence of amorphous SiO2. SOLID STATE COMMUNICATIONS.|
|Tipo:||Articolo in rivista - Articolo scientifico|
|Carattere della pubblicazione:||Scientifica|
|Titolo:||Phosphorescence and thermally stimulated luminescence of amorphous SiO2|
|Autori:||Martini, M; Spinolo, G; Arena, C; Vedda, AG|
|Data di pubblicazione:||1994|
|Rivista:||SOLID STATE COMMUNICATIONS|
|Appare nelle tipologie:||01 - Articolo su rivista|