Boron diffusivity in single-crystal diamond has been investigated. To this aim, a novel method using impedance spectroscopy for the study of the atomic diffusivity in wide-gap semiconductor has been developed, along with a model for the analysis of the dielectric response function. The advantages of this procedure are discussed. Boron diffusivity in diamond has been determined to be 6.9×10-20 cm2 s-1 at 800°C. A discussion of the results and a comparison with previous estimates are presented.
Narducci, D., Cuomo, J. (1990). Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy. JOURNAL OF APPLIED PHYSICS, 68(3), 1184-1186 [10.1063/1.346714].
Boron diffusivity in nonimplanted diamond single crystals measured by impedance spectroscopy
Narducci D.;
1990
Abstract
Boron diffusivity in single-crystal diamond has been investigated. To this aim, a novel method using impedance spectroscopy for the study of the atomic diffusivity in wide-gap semiconductor has been developed, along with a model for the analysis of the dielectric response function. The advantages of this procedure are discussed. Boron diffusivity in diamond has been determined to be 6.9×10-20 cm2 s-1 at 800°C. A discussion of the results and a comparison with previous estimates are presented.
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