Transmission electron microscopy analysis of tin dioxide films grown by aerosol-assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub-oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers. © 1996 American Institute of Physics.
Alfonso, C., Charai, A., Armigliato, A., Narducci, D. (1996). Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon. APPLIED PHYSICS LETTERS, 68(9), 1207-1208 [10.1063/1.115970].
Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO2 deposition on silicon
Narducci D.
1996
Abstract
Transmission electron microscopy analysis of tin dioxide films grown by aerosol-assisted chemical vapor deposition onto oxidized or etched silicon displayed the formation of a sub-oxide phase that was identified as Sn2O3. Such a phase is observed to disappear upon heat treatment, and is believed to be one of the factors responsible for the instability of tin dioxide films used as gas sensing layers. © 1996 American Institute of Physics.
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Transmission electron microscopy investigation of tin sub-oxide nucleation upon SnO 2 deposition on silicon.pdf
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