This paper presents a double-domain capacitor-less Low-DropOut (LDO) voltage regulator developed to drive a One Time Programmable (OTP) memory (consisting of 512 memory cells) for circuit trimming in automotive applications. The LDO is powered by the car's battery voltage and generates the OTP programming voltage, regardless of variations on the line and on the load equivalent capacitance and resistance. The LDO steadily provides a 10.8V output with a 0.5% nominal error consuming a 500μ A idle current and it is capable of delivering up to 10mA to a 10pF -variable resistance load. The settling time is <1μs at fully load transient without presenting overshoot and ringing that would cause a faster and uncontrolled deterioration of the cells. An average current of 2.5mA flows in a programmed cell during the programming phase, while 60μA flows during reading phase, making it distinguishable from a virgin cell. In a 0.35μm CMOS technology, the LDO occupies an active area of 220x324μm2 . The measurements validate the proposed structure.

Gasparri, O., Bozic, A., del Croce, P., Baschirotto, A. (2021). A Low-Dropout Regulator for One Time Programmable (OTP) Memories in Automotive Applications. In 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECS53924.2021.9665607].

A Low-Dropout Regulator for One Time Programmable (OTP) Memories in Automotive Applications

Gasparri, O
;
Baschirotto, A
2021

Abstract

This paper presents a double-domain capacitor-less Low-DropOut (LDO) voltage regulator developed to drive a One Time Programmable (OTP) memory (consisting of 512 memory cells) for circuit trimming in automotive applications. The LDO is powered by the car's battery voltage and generates the OTP programming voltage, regardless of variations on the line and on the load equivalent capacitance and resistance. The LDO steadily provides a 10.8V output with a 0.5% nominal error consuming a 500μ A idle current and it is capable of delivering up to 10mA to a 10pF -variable resistance load. The settling time is <1μs at fully load transient without presenting overshoot and ringing that would cause a faster and uncontrolled deterioration of the cells. An average current of 2.5mA flows in a programmed cell during the programming phase, while 60μA flows during reading phase, making it distinguishable from a virgin cell. In a 0.35μm CMOS technology, the LDO occupies an active area of 220x324μm2 . The measurements validate the proposed structure.
slide + paper
Analog Trimming; Low Dropout Regulator (LDO); Memory; One Time Programmable (OTP); Oxide Breakdown; Voltage Regulator;
English
28th IEEE International Conference on Electronics, Circuits, and Systems, ICECS 2021 - 28 November 2021 through 1 December 2021
2021
2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS)
978-172818281-0
2021
https://ieeexplore.ieee.org/document/9665607
reserved
Gasparri, O., Bozic, A., del Croce, P., Baschirotto, A. (2021). A Low-Dropout Regulator for One Time Programmable (OTP) Memories in Automotive Applications. In 2021 28th IEEE International Conference on Electronics, Circuits, and Systems (ICECS). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICECS53924.2021.9665607].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/346250
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