Thermally Stimulated Luminescence (TSL) properties of SIMOX oxides, induced by x-irradiation, have been studied in the temperature range 100-400 K. For the first time studied in SIMOX, a series of TSL peaks at 110, 150 and 200 K appear clearly. A continuous distribution of trap levels ranging from 0. 4 to 1. 1 eV has been found to be responsible for the broad and intense peak observed at 200 K; moreover, the wavelength distribution of the emitted light has revealed the presence of an emission centred at 2. 7 eV. A comparison with the TSL properties of synthetic silica is presented, and the results are discussed also in the light of previous characterizations of trap levels obtained by electrical techniques. This study gives new insight concerning the electron and hole traps structures in SIMOX compared to bulk silica. © 1998 IEEE.

Martini, M., Meinardi, F., Rosetta, E., Spinolo, G., Vedda, A., Leray, J., et al. (1998). Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 45(3), 1396-1401 [10.1109/23.685213].

Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence

MARTINI, MARCO;MEINARDI, FRANCESCO;ROSETTA, EMANUELA;SPINOLO, GIORGIO MARIO;VEDDA, ANNA GRAZIELLA;
1998

Abstract

Thermally Stimulated Luminescence (TSL) properties of SIMOX oxides, induced by x-irradiation, have been studied in the temperature range 100-400 K. For the first time studied in SIMOX, a series of TSL peaks at 110, 150 and 200 K appear clearly. A continuous distribution of trap levels ranging from 0. 4 to 1. 1 eV has been found to be responsible for the broad and intense peak observed at 200 K; moreover, the wavelength distribution of the emitted light has revealed the presence of an emission centred at 2. 7 eV. A comparison with the TSL properties of synthetic silica is presented, and the results are discussed also in the light of previous characterizations of trap levels obtained by electrical techniques. This study gives new insight concerning the electron and hole traps structures in SIMOX compared to bulk silica. © 1998 IEEE.
Articolo in rivista - Articolo scientifico
SIMOX, thermally stimulated luminescence
English
1396
1401
6
Martini, M., Meinardi, F., Rosetta, E., Spinolo, G., Vedda, A., Leray, J., et al. (1998). Radiation induced trap levels in SIMOX oxides: low temperature thermally stimulated luminescence. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 45(3), 1396-1401 [10.1109/23.685213].
Martini, M; Meinardi, F; Rosetta, E; Spinolo, G; Vedda, A; Leray, J; Paillet, P; Autran, J; Devine, R
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/34499
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