We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726189]

Cavigli, L., Bietti, S., Accanto, N., Minari, S., Abbarchi, M., Isella, G., et al. (2012). High temperature single photon emitter monolithically integrated on silicon. APPLIED PHYSICS LETTERS, 100(23), 231112-1-231112-4 [10.1063/1.4726189].

High temperature single photon emitter monolithically integrated on silicon

BIETTI, SERGIO;SANGUINETTI, STEFANO
2012

Abstract

We report on triggered single photon emission from GaAs quantum dots, grown on Si substrates and obtained by means of fabrication protocols compatible with the monolithic integration on Si based microelectronics. Very bright and sharp individual exciton lines are resolved in the spectra and can be followed up to 150 K. The nature of quantum emitters of single photon pulses can be measured up to liquid nitrogen temperature by Hanbury Brown and Twiss interferometric correlations. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4726189]
Articolo in rivista - Articolo scientifico
Quantum Nanostructures; Molecular Beam Epitaxy; III-V Semiconductors; Silicon; Photoluminescence
English
2012
100
23
231112-1
231112-4
none
Cavigli, L., Bietti, S., Accanto, N., Minari, S., Abbarchi, M., Isella, G., et al. (2012). High temperature single photon emitter monolithically integrated on silicon. APPLIED PHYSICS LETTERS, 100(23), 231112-1-231112-4 [10.1063/1.4726189].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/33536
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