We resolved a photoemission signal from a single self-organized GaAs/Al/sub 0.3/Ga/sub 0.7/As quantum dot (QD) with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.

Kuroda, T., Sanguinetti, S., Minami, F., Gurioli, M., Watanabe, K., Koguchi, N. (2003). Nonlinear carrier relaxation in a single GaAs self-organized quantum dot. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 737, 87-92.

Nonlinear carrier relaxation in a single GaAs self-organized quantum dot

Sanguinetti, S;
2003

Abstract

We resolved a photoemission signal from a single self-organized GaAs/Al/sub 0.3/Ga/sub 0.7/As quantum dot (QD) with picosecond time resolution. The emission spectra consisting of the multiexciton structures are observed to depend on the delay time and the excitation intensity. Through the analysis we can determine the carrier relaxation time as a function of population of photoinjected carriers. Enhancement of the intra-dot carrier relaxation is demonstrated to be due to the carrier-carrier scattering inside a single QD.
Articolo in rivista - Articolo scientifico
quantum dots; III-V Semiconductors
English
2003
737
87
92
none
Kuroda, T., Sanguinetti, S., Minami, F., Gurioli, M., Watanabe, K., Koguchi, N. (2003). Nonlinear carrier relaxation in a single GaAs self-organized quantum dot. MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 737, 87-92.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/33508
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