An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process. © 2011 Springer Science+Business Media, LLC.

Siliprandi, R., Zanini, S., Grimoldi, E., Fumagalli, F., Barni, R., Riccardi, C. (2011). Atmospheric pressure plasma discharge for polysiloxane thin films deposition and comparison with low pressure process. PLASMA CHEMISTRY AND PLASMA PROCESSING, 31(2), 353-372 [10.1007/s11090-011-9286-3].

Atmospheric pressure plasma discharge for polysiloxane thin films deposition and comparison with low pressure process

ZANINI, STEFANO;BARNI, RUGGERO
;
RICCARDI, CLAUDIA
2011

Abstract

An atmospheric pressure dielectric barrier plasma discharge has been used to study a thin film deposition process. The DBD device is enclosed in a vacuum chamber and one of the electrodes is a rotating cylinder. Thus, this device is able to simulate continuous processing in arbitrary deposition condition of pressure and atmosphere composition. A deposition process of thin organosilicon films has been studied reproducing a nitrogen atmosphere with small admixtures of hexamethyldisiloxane (HMDSO) vapours. The plasma discharge has been characterized with optical emission spectroscopy and voltage-current measurements. Thin films chemical composition and morphology have been characterized with FTIR spectroscopy, atomic force microscopy (AFM) and contact angle measurements. A strong dependency of deposit character from the HMDSO concentration has been found and then compared with the same dependency of a typical low pressure plasma enhanced chemical vapour deposition process. © 2011 Springer Science+Business Media, LLC.
Articolo in rivista - Articolo scientifico
plasma discharge, atmosferic pressure, thin film deposition
English
2011
31
2
353
372
none
Siliprandi, R., Zanini, S., Grimoldi, E., Fumagalli, F., Barni, R., Riccardi, C. (2011). Atmospheric pressure plasma discharge for polysiloxane thin films deposition and comparison with low pressure process. PLASMA CHEMISTRY AND PLASMA PROCESSING, 31(2), 353-372 [10.1007/s11090-011-9286-3].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/10281/33190
Citazioni
  • Scopus 45
  • ???jsp.display-item.citation.isi??? 41
Social impact